OPTO DIODE OD-50W
SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES
.357 .362 .100 OD-50W GLASS .012 HIGH MAX ANODE (CASE) .157 .169 .018●
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● Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .025 .500 CATHODE .040 45° All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time CE TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 60 TYP 75 1000 60 80 110 1.65 5 30 90 0.7 0.7 880 1000mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Ph...