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PHOTODIODE 13 mm2
UVG12
FEATURES
• Circular active area • Ideal for 193-400 nm detection • 100% internal QE • No cap for maximum responsivity • Sacrificial cap taped on for
shipping purposes
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
Ø 4.1 mm
Responsivity, R
@ 254 nm
Shunt Resistance Reverse Breakdown Voltage, VR Capacitance, C Rise Time
VF = ± 10 mV IR = 1 µA VR = 0 V VR = 0 V
MIN
0.105 100
TYP 13.2 0.115 1000
9 3
MAX 0.125
7 4
UNITS mm2 A/W Mohm Volts nF µsec
THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature Lead Soldering Temperature1
10.0625" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
UVG12 Datasheet
