OPTO DIODE UVG12
PHOTODIODE
| Part No. | UVG12 |
|---|---|
| Datasheet | UVG12 Download |
| Manufacturer | OPTO DIODE |
| Description | PHOTODIODE |
| Buy | Stock & Price |
FEATURES
● Circular active area● Ideal for 193-400 nm detection
● 100% internal QE
● No cap for maximum responsivity
● Sacrificial cap taped on for shipping purposes Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Ø 4.1 mm Responsivity, R @ 254 nm Shunt Resistance Reverse Breakdown Voltage, VR Capacitance, C Rise Time VF = ± 10 mV IR = 1 µA VR = 0 V VR = 0 V MIN 0.105 100 TYP 13.2 0.115 1000 9 3 MAX 0.125 7 4 UNITS mm2 A/W Mohm Volts nF µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 10.0625" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. -20° TO 80°C 80°C 240°C Revision September 6, 2013 750 Mitchell Road, Newbury Park, Califo
