Full PDF Text Transcription for UVG20S (Reference)
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UVG20S. For precise diagrams, and layout, please refer to the original PDF.
PHOTODIODE 24 mm2 FEATURES • Circular active area • Ideal for 190-400 nm detection • 100% internal QE • UV quartz window epoxy bonded in place UVG20S Dimensions are in in...
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E • UV quartz window epoxy bonded in place UVG20S Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Ø 5.5 mm Responsivity, R @ 254 nm Shunt Resistance Reverse Breakdown Voltage, VR Capacitance, C Rise Time VF = ± 10 mV IR = 1 µA VR = 0 V VR = 0 V MIN 0.105 50 10 TYP 24 0.115 100 50 2.5 MAX 0.125 4 4 UNITS mm2 A/W Mohm Volts nF µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 10.0625" from case for 10 seconds.
UVG20S Datasheet
