• Part: UVG20S
  • Description: PHOTODIODE
  • Category: Diode
  • Manufacturer: OPTO DIODE
  • Size: 227.11 KB
Download UVG20S Datasheet PDF
OPTO DIODE
UVG20S
UVG20S is PHOTODIODE manufactured by OPTO DIODE.
FEATURES - Circular active area - Ideal for 190-400 nm detection - 100% internal QE - UV quartz window epoxy bonded in place Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Ø 5.5 mm Responsivity, R @ 254 nm Shunt Resistance Reverse Breakdown Voltage, VR Capacitance, C Rise Time VF = ± 10 m V IR = 1 µA VR = 0 V VR = 0 V 0.105 50 10 TYP 24 0.115 100 50 2.5 MAX 0.125 4 4 UNITS mm2 A/W Mohm Volts n F µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 10.0625" from case for 10 seconds. -20° TO 80°C 80°C 240°C Revision September 6, 2013 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode., Website: .optodiode. Responsivity (A/W) PHOTODIODE 24 mm2 0.6 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0.0 200...