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PHOTODIODE 24 mm2
FEATURES
• Circular active area • Ideal for 190-400 nm detection • 100% internal QE • UV quartz window epoxy bonded
in place
UVG20S
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
Ø 5.5 mm
Responsivity, R
@ 254 nm
Shunt Resistance Reverse Breakdown Voltage, VR Capacitance, C Rise Time
VF = ± 10 mV IR = 1 µA VR = 0 V VR = 0 V
MIN
0.105 50 10
TYP 24 0.115 100 50 2.5
MAX 0.125
4 4
UNITS mm2 A/W Mohm Volts nF µsec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature Lead Soldering Temperature1
10.0625" from case for 10 seconds.
UVG20S Datasheet
