Datasheet Details
| Part number | F0118G |
|---|---|
| Manufacturer | ams OSRAM |
| File Size | 66.76 KB |
| Description | GaAs Infrared Emitting Diode |
| Datasheet |
 F0118G Datasheet
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General Description
Infrarot emittierender Chip, Oberseite Anodenanschluß, Infrared emitting die, top side anode connection
2003-04-10
1
F 0118G
Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax,
Key Features
- Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package.
- Chip size 300 x 300 µm2.
- Peak wavelength: 950 nm.
- Very highly efficient GaAs LED.
- Good linearity (Ie = f [IF]) at high currents.
- DC or pulsed operations are possible.
- High reliability.
- High pulse handling capability.