FDD6630A
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Key Features
- 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
- Low gate charge (5nC typical)
- Fast switching
- High performance trench technology for extremely low RDS(ON) D G S TO-252
