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FDD6630A - N-Channel PowerTrench MOSFET

General Description

This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • • • • • 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • • 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON).