Datasheet Summary
June 2002
N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ
General Description
This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317
Features
- Fast switching
- rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
- rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
- Qg(TOT) (Typ) = 2.6nC, VGS = 5V
- Qgd (Typ) = 0.8nC
- CISS (Typ) = 255pF
Applications
- DC/DC converters
D-PAK TO-252...