Description
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
Inverter
Power Supplies
Features
- 59 A, 35 V
RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V.
- Fast Switching.
- RoHS compliant
D G
S DTO-P-2A5K2 (TO-252)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VDS(Avalanche) VGSS ID
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Ratings
35 40 ±20 59 15 100
EAS PD
TJ, TSTG
S.
FDD6635 Datasheet
