Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
Inverter
Power Supplies
Features
- 55 A,.
- 35 V RDS(ON) = 11.6 mΩ @ VGS =.
- 10 V RDS(ON) = 18 mΩ @ VGS =.
- 4.5 V.
- High performance trench technology for extremely low RDS(ON).
- RoHS Compliant
D
D G
S DTO-P-2A5K2
(TO-252)
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS VDS(Avalanche) VGSS ID
PD
TJ, TSTG
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current
@TC=.
FDD6637 Datasheet
