FDD6637 Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Applications Inverter Power Supplies.
FDD6637 Key Features
- 55 A, -35 V RDS(ON) = 11.6 mΩ @ VGS = -10 V RDS(ON) = 18 mΩ @ VGS = -4.5 V
- High performance trench technology for extremely low RDS(ON)
- RoHS pliant