OptoDiode OD-880F
HIGH-POWER GaAlAs IR EMITTERS
| Part No. | OD-880F |
|---|---|
| Datasheet | OD-880F Download |
| Manufacturer | OptoDiode |
| Description | HIGH-POWER GaAlAs IR EMITTERS |
| Buy | Stock & Price |
FEATURES
ANODE (CASE) .209 .212● High reliability liquid-phase epitaxially grown GaAlAs
● 880nm peak emission for optimum matching with ODD-45W photodiode
● Wide range of linear power output
● Hermetically sealed TO-46 package .041 .015 .183 .186 .152 .154 .100
● Narrow angle for long distance applications
● OD-880F1 selected to meet minimum radiant intensity .017 .030 .040 .036 45° CATHODE .197 .205 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie OD-880F OD-880F1 OD-880F OD-880F1 TEST CONDITIONS IF = 100mA 120 IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 15 TYP 17 8 135 160 880 80 8 1.55 30 17 0.5 0.5 1.9 MAX UNITS mW mW/sr nm nm Deg Volts Volts pF µsec µsec Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance...
