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OD-880F - HIGH-POWER GaAlAs IR EMITTERS

Features

  • ANODE (CASE) .209 .212.
  • High reliability liquid-phase epitaxially grown GaAlAs.
  • 880nm peak emission for optimum matching with ODD-45W photodiode.
  • Wide range of linear power output.
  • Hermetically sealed TO-46 package .041 .015 .183 .186 .152 .154 .100.
  • Narrow angle for long distance.

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Datasheet Details

Part number OD-880F
Manufacturer OptoDiode
File Size 105.64 KB
Description HIGH-POWER GaAlAs IR EMITTERS
Datasheet download datasheet OD-880F Datasheet
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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package .041 .015 .183 .186 .152 .154 .100 • Narrow angle for long distance applications • OD-880F1 selected to meet minimum radiant intensity .017 .030 .040 .036 45° www.DataSheet4U.com CATHODE .197 .205 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case.
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