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OD-880F - HIGH-POWER GaAlAs IR EMITTERS

Features

  • High reliability liquid-phase epitaxially grown GaAlAs.
  • 880nm peak emission for optimum matching with ODD-45W photodiode.
  • Wide range of linear power output.
  • Hermetically sealed TO-46 package.
  • Narrow angle for long distance.

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Datasheet preview – OD-880F

Datasheet Details

Part number OD-880F
Manufacturer OPTO DIODE
File Size 239.51 KB
Description HIGH-POWER GaAlAs IR EMITTERS
Datasheet download datasheet OD-880F Datasheet
Additional preview pages of the OD-880F datasheet.

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Full PDF Text Transcription

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Narrow angle for long distance applications .041 ANODE (CASE) .209 .220 .015 .183 .186 .152 .154 .100 .017 .030 .040 CATHODE .197 .205 .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA MB ER MIN 15 120 TYP 17 135 880 80 8 1.55 5 30 17 0.5 0.
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