OPTO DIODE OD-880F
HIGH-POWER GaAlAs IR EMITTERS
| Part No. | OD-880F |
|---|---|
| Datasheet | OD-880F Download |
| Manufacturer | OPTO DIODE |
| Description | HIGH-POWER GaAlAs IR EMITTERS |
| Buy | Stock & Price |
FEATURES
● High reliability liquid-phase epitaxially grown GaAlAs● 880nm peak emission for optimum matching with ODD-45W photodiode
● Wide range of linear power output
● Hermetically sealed TO-46 package
● Narrow angle for long distance applications .041 ANODE (CASE) .209 .220 .015 .183 .186 .152 .154 .100 .017 .030 .040 CATHODE .197 .205 .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA MB ER MIN 15 120 TYP 17 135 880 80 8 1.55 5 30 17 0.5 0.5 190mW 100mA 3A 5V 260°C -55°C to 100°C 100°C 350°C/W Typical 115°C/W Typical RoHS 20 MAX UNITS mW mW/sr nm nm Deg 1.9 Volts Volts pF µsec µsec IF = 50mA IF = 100mA IR = 10μA VR = 0V
ABSOLUTE MAXIMUM RATINGS
AT 25°C CASE Power Dissipation1 Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead...