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OD-880W - HIGH-POWER GaAlAs IR EMITTERS

Features

  • High reliability liquid-phase epitaxially grown GaAlAs.
  • 880nm peak emission for optimum matching with ODD-45W photodiode.
  • Wide range of linear power output.
  • Hermetically sealed TO-46 package.
  • Wide emission angle to cover a large area .041 GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .100.

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Datasheet Details

Part number OD-880W
Manufacturer OPTO DIODE
File Size 236.15 KB
Description HIGH-POWER GaAlAs IR EMITTERS
Datasheet download datasheet OD-880W Datasheet
Additional preview pages of the OD-880W datasheet.

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Full PDF Text Transcription

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HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Wide emission angle to cover a large area .041 GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .100 CATHODE .143 .150 .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 50mA MB E MIN 18 TYP 20 16 80 80 1.55 5 30 17 0.5 0.
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