OPTO DIODE OD-880W
HIGH-POWER GaAlAs IR EMITTERS
FEATURES
● High reliability liquid-phase epitaxially grown GaAlAs● 880nm peak emission for optimum matching with ODD-45W photodiode
● Wide range of linear power output
● Hermetically sealed TO-46 package
● Wide emission angle to cover a large area .041 GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .100 CATHODE .143 .150 .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 50mA MB E MIN 18 TYP 20 16 80 80 1.55 5 30 17 0.5 0.5 880 70 190mW 100mA 3A 5V 260°C -55°C TO 100°C 100°C 400°C/W Typical 135°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 1.9 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.c...