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OSG50R1K5AF - N-Channel Power MOSFET

General Description

OSG50R1K5xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

VDS, min@Tjmax ID, pulse RDS(ON

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Datasheet Details

Part number OSG50R1K5AF
Manufacturer Oriental Semiconductor
File Size 818.47 KB
Description N-Channel Power MOSFET
Datasheet download datasheet OSG50R1K5AF Datasheet

Full PDF Text Transcription (Reference)

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, OSG50R1K5AF/OSG50R1K5DF/OSG50R1K5FF/OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET  General Description OSG50R1K5xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 550 V 9A 1.5 Ω 4.