OSG55R092HF - N-Channel Power MOSFET

General Description

OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for telecom and super charger applications.

VDS, min@Tjmax ID, pulse RDS(ON), max @ VGS=10 V Qg 600 V 120

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OSG55R092HF n-channel power mosfet by Oriental Semiconductor - Datasheet Preview

Datasheet Details

Part number	OSG55R092HF
Manufacturer	Oriental Semiconductor
File Size	716.35 KB
Description	N-Channel Power MOSFET
Datasheet	OSG55R092HF Datasheet

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, OSG55R092HF Enhancement Mode N-Channel Power MOSFET  General Description OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 600 V 120 A 92 mΩ 38.