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OSG55R092HF - N-Channel Power MOSFET

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Description

OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for telecom and super charger applications.

VDS, min@Tjmax ID, pulse RDS(ON), max @ VGS=10 V Qg 600 V 120

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Datasheet Details

Part number OSG55R092HF
Manufacturer Oriental Semiconductor
File Size 716.35 KB
Description N-Channel Power MOSFET
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, OSG55R092HF Enhancement Mode N-Channel Power MOSFET  General Description OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 600 V 120 A 92 mΩ 38.
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