OSG60R180FF Datasheet | Oriental Semiconductor

Description OSG60R180x F use advanced Green MOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. - VDS, min@Tjmax - ID, pulse - RDS(ON), max @ VGS=10 V - Qg 650 V 60 A 180 mΩ 23.3 n C - Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT-TOP VIEW TO220F TO220 TO263 TO247 TO262 OSG60R180FF OSG60R180PF OSG60R180KF OSG60R180HF OSG60R180IF - Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Drain source voltage Gate source voltage Continuous drain current1), TC=25 ℃ Continuous drain current1), TC=100 ℃ Pulsed drain current2), TC=25 ℃ Power dissipation3) for TO220, TO263, TO262, TO247 , TC=25 ℃ Power dissipation3) for TO220F , TC=25 ℃ Single pulsed avalanche energy5) MOSFET dv/dt ruggedness, VDS=0…480 V Reverse diode dv/dt, VDS=0…480 V, ISD≤ID Operation and storage temperature Symbol VDS VGS ID, pulse EAS dv/dt dv/dt Tstg，Tj Value 600 ±30 20 12.5 60 151 34 600 50 15 -55 to 150 Unit V V W m J V/ns V/ns ℃ Oriental Semiconductor © Copyright reserved 2017 2 / 13 , OSG60R180FF, OSG60R180PF, OSG60R180KF, OSG60R180HF, OSG60R180IF Enhancement Mode N-Channel Power MOSFET - Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient4) Value Symbol TO220/TO263/TO247/TO262...