OSG60R050HT3ZF Datasheet | Oriental Semiconductor

Description The Green MOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Green MOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor. Features - Low RDS(ON) & FOM - Extremely low switching loss - Excellent stability and uniformity Applications - LED lighting - Tele - Adapter - Sever - Solar/UPS Key Performance Parameters Parameter VDS ID, pulse RDS(ON), max @ VGS=10V Qg PD Value 600 156 50 92 320 Unit V A mΩ n C W Marking Information Product Name OSG60R050HT3ZF Package TO247 Marking OSG60R050HT3Z Package & Pin Information Oriental Semiconductor © Copyright Reserved V1.0 Page.1 Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Drain-source voltage Gate-source voltage (static) VGS Gate-source voltage (dynamic) Continuous drain current1), TC=25 °C ID Continuous drain current1), TC=100 °C Pulsed drain current2), TC=25 °C ID, pulse Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C IS, pulse Power dissipation3), TC=25...