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OSG60R050HT3ZF - N-Channel Power MOSFET

Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.

It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.

Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.

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Datasheet Details

Part number OSG60R050HT3ZF
Manufacturer Oriental Semiconductor
File Size 0.98 MB
Description N-Channel Power MOSFET
Datasheet download datasheet OSG60R050HT3ZF Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OSG60R050HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
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