OSG60R070PT3ZAF Datasheet | Oriental Semiconductor

Description The Green MOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Green MOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor. Features - Low RDS(ON) & FOM - Extremely low switching loss - Excellent stability and uniformity - AEC-Q101 Qualified for Automotive Application Applications - LED lighting - Adapter - Tele - Solar/UPS - Sever Key Performance Parameters Parameter VDS ID, pulse RDS(ON), max @ VGS=10V Qg Value 600 144 70 74 Marking Information Product Name OSG60R070PT3ZAF Package TO220 Package & Pin Information Unit V A mΩ n C Marking OSG60R070PT3ZA Oriental Semiconductor © Copyright Reserved V1.0 Page.1 Automotive-grade N-Channel Power MOSFET Automotive-grade N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage Gate-source voltage ±30 Continuous drain current1), TC=25 °C Continuous drain current1), TC=100...