D882H
D882H is NPN Transistor manufactured by OuCan.
FEATURE
- Low VCE(sat)
- Large current capacity
MAKING: D882H
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value 70 60 6 3 500 250 150
-55～+150
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
Unit V V V A m W ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)C= BO IC=100µA, IE 0
Collector-emitter breakdown voltage
V(BR= )CEO IC=10m A, IB 0
Emitter-base breakdown voltage
V(BR= )EBO IE=100µA, IC 0
Collector cut-off current
= ICBO VCB=40V, IE 0
Collector cut-off current
= ICEO VCE=30V, IB 0
Emitter cut-off current
= IEBO VEB=6V, IC 0
DC current gain
= h FE VCE=2V, IC 1A
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB= 0.2A
Base-emitter saturation voltage
VB= E(sat) IC=2A, IB...
