D882 Description
IB=0.2A VBEsat Base-emitter saturation voltage IC=2.0A ;IB=0.2A ICBO Collector cut-off current VCB=30V; IE=0 IEBO Emitter cut-off current VEB=3V; IC=0 hFE-1 DC current gain IC=20mA.
| Part number | D882 |
|---|---|
| Download | D882 Datasheet (PDF) |
| File Size | 159.00 KB |
| Manufacturer | SavantIC |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Micro Commercial Components |
D882 | NPN Silicon Plastic-Encapsulate Transistor |
NEC |
D882 | NPN SILICON POWER TRANSISTOR |
| D882 | NPN TRANSISTORS | |
Unisonic Technologies |
D882 | NPN SILICON TRANSISTOR |
STMicroelectronics |
D882 | NPN medium power transistor |
IB=0.2A VBEsat Base-emitter saturation voltage IC=2.0A ;IB=0.2A ICBO Collector cut-off current VCB=30V; IE=0 IEBO Emitter cut-off current VEB=3V; IC=0 hFE-1 DC current gain IC=20mA.