Datasheet Details
| Part number | FQP20N60 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 497.32 KB |
| Description | 20A N-Channel MOSFET |
| Datasheet | FQP20N60-OucanSemi.pdf |
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Overview: FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General.
| Part number | FQP20N60 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 497.32 KB |
| Description | 20A N-Channel MOSFET |
| Datasheet | FQP20N60-OucanSemi.pdf |
|
|
|
Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 20A < 0.37Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AFQOPT20N60 FQPF20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP20N60 65 0.5 FQPF20N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.3 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 FQP20N60/FQPF20N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) S
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