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2SC3195 - NPN Silicon Epitaxial Planar Transistor

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.

Key Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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Datasheet Details

Part number 2SC3195
Manufacturer PACO
File Size 100.51 KB
Description NPN Silicon Epitaxial Planar Transistor
Datasheet download datasheet 2SC3195 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18533Q5A www.ti.com SLPS388 – SEPTEMBER 2012 60-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18533Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 29 5.4 VGS = 4.5V VGS = 10V 1.9 6.5 4.