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ERF9530 - RF Power MOSFET

Description

The ERF9530 is a N-Channel Enhancement Mode MOSFET transistor developed for RF power ampli er applications in the HF frequency range.

High power in a TO-3PN package for an excellent ‘watt per dollar’ value.

Features

  • High Power and Economical: Pout > 25W (100W PEP) Gp > 10dB @ 12.5V, f=30MHz.

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Datasheet preview – ERF9530

Datasheet Details

Part number ERF9530
Manufacturer PALOMAR
File Size 4.15 MB
Description RF Power MOSFET
Datasheet download datasheet ERF9530 Datasheet
Additional preview pages of the ERF9530 datasheet.

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    ERF9530 RF Power MOSFET - 30MHz / 100 Watt PEP DESCRIPTION The ERF9530 is a N-Channel Enhancement Mode MOSFET transistor developed for RF power ampli er applications in the HF frequency range. High power in a TO-3PN package for an excellent ‘watt per dollar’ value. FEATURES • High Power and Economical: Pout > 25W (100W PEP) Gp > 10dB @ 12.5V, f=30MHz APPLICATION Final ampli cation stages in mobile HF transceivers and ampli ers. TO-3PN PACKAGE OUTLINE Pins: 1. Gate 2. Drain 3. Source 4. Drain (Fin) SYM INCHES MIN MAX A .185 A1 .051 A2 .057 b .035 b2 .075 b4 .114 c .022 D .780 D1 .665 E .610 E1 .531 e .205 L .779 L1 .118 ØP .126 ØP1 .272 S .193 .193 .059 .065 .045 .087 .126 .031 .791 .677 .622 .539 .225 .795 .145 .134 .280 .201 MILLIMETER MIN MAX 4.70 4.90 1.30 1.50 1.45 1.65 0.90 1.
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