Datasheet4U Logo Datasheet4U.com

PJQ1916 - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology.
  • ESD Protected.
  • Specially Designed for Switch Load, PWM.

📥 Download Datasheet

Datasheet preview – PJQ1916

Datasheet Details

Part number PJQ1916
Manufacturer PAN JIT
File Size 768.90 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet PJQ1916 Datasheet
Additional preview pages of the PJQ1916 datasheet.

📁 Similar Datasheet

  • PJQ1900 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ1901 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ1902 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ2460 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ2800 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ2815 - 20V P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ2888 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ5461A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ5463A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
  • PJQ5465A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
Other Datasheets by PAN JIT

Full PDF Text Transcription

Click to expand full text
PPJQ1916 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 950mA Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard DFN1006-3L Mechanical Data  Case : DFN1006-3L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.00002 ounces, 0.
Published: |