Datasheet Summary
PPJQ1916
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current 950mA
Features
- Advanced Trench Process Technology
- ESD Protected
- Specially Designed for Switch Load, PWM Application, etc
- Lead free in pliance with EU RoHS 2.0
- Green molding pound as per IEC 61249 standard
DFN1006-3L
Mechanical Data
- Case : DFN1006-3L Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.00002 ounces, 0.0007 grams
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 1)
Power Dissipation
Ta=25oC...