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Prelim
PJQ4446P
40V N-Channel Enhancement Mode MOSFET
Voltage
40 V
Current
48 A
DFN3333-8L
Features
RDS(ON), VGS@10V, ID@8A<9mΩ RDS(ON), VGS@4.5V, ID@4A<13mΩ Advanced Trench Process Technology High density cell design for ultralow on-resistance Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard
Mechanical Data
Case : DFN3333-8L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.001 ounces, 0.
PJQ4446P Datasheet
