PJQ4446P Description
Prelim PJQ4446P 40V N-Channel Enhancement Mode MOSFET Voltage 40 V Current 48 A DFN3333-8L.
PJQ4446P Key Features
- RDS(ON), VGS@10V, ID@8A<9mΩ
- RDS(ON), VGS@4.5V, ID@4A<13mΩ
- Advanced Trench Process Technology
- High density cell design for ultralow on-resistance
- Lead free in pliance with EU RoHS 2.0
- Green molding pound as per IEC 61249 standard
- Case : DFN3333-8L Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.001 ounces, 0.03 grams
- Limited only By Maximum Junction Temperature