PJA3476-AU
PJA3476-AU is 100V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V, ID@300m A<6Ω
- RDS(ON), VGS@4.5V, ID@200m A<9Ω
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc
- AEC-Q101 qualified
- Lead free in pliance with EU Ro HS 2.0
- Green molding pound as per IEC 61249 standard
Mechanical Data
- Case : SOT-23 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.0003 ounces, 0.0084 grams
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(Note 4)
Pulsed Drain Current(Note 1)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient(Note 3,4)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT 100 +20 300 800 500
4 -55~150
UNITS V m A m W m W/ o C o C o C/W
July 8,2021
PJA3476-AU-REV.00
Page 1
Electrical Characteristics (TA=25o C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS...