• Part: PJA3476-AU
  • Description: 100V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 375.40 KB
Download PJA3476-AU Datasheet PDF
PanJit Semiconductor
PJA3476-AU
PJA3476-AU is 100V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON), VGS@10V, ID@300m A<6Ω - RDS(ON), VGS@4.5V, ID@200m A<9Ω - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc - AEC-Q101 qualified - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : SOT-23 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0003 ounces, 0.0084 grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Note 4) Pulsed Drain Current(Note 1) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient(Note 3,4) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 100 +20 300 800 500 4 -55~150 UNITS V m A m W m W/ o C o C o C/W July 8,2021 PJA3476-AU-REV.00 Page 1 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS...