PJD100P04-AU Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@-10V, ID@-20A<6.5mΩ - RDS(ON), VGS@-4.5V, ID@-10A<9mΩ - High switching speed - Improved dv/dt capability - Low gate charge - Low reverse transfer capacitance - AEC-Q101 qualified - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : TO-252AA Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0105 ounces, 0.297grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) TC=25o C TC=100o C Pulsed Drain Current (Note 1) TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current (Note 4) TA=25o C TA=70o C Power Dissipation TA=25o C TA=70o C Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Junction to Case Typical Thermal Resistance (Note 4,5) Junction to Ambient SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJC RθJA LIMIT -40 +20 -85 -53 -300 69.4 27.8 -14 -11 2.0 1.3 245 -55~150 1.8 62.5 UNITS...