PJD45N03 Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V,ID@10A<12mΩ - RDS(ON), VGS@4.5V,ID@5A<18mΩ - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS2.0 (2011/65/EU & 2015/865/EU directive) - Green molding pound as per IEC61249 Std.. (Halogen Free) Mechanical Data - Case : TO-252AA Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0104 ounces, 0.297grams TO-252AA Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25o C TC=100o C Pulsed Drain Current (Note 1) TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current TA=25o C TA=70o C Power Dissipation TA=25o C Power Dissipation TA=70o C Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 4,5) Junction to Case Junction to Ambient SYMBOL VDS VGS ID IDM...