PJD50P04-AU Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@-10V, ID@-10A<12mΩ - RDS(ON), VGS@-4.5V, ID@-8A<17.5mΩ - High switching speed - Improved dv/dt capability - Low gate charge - Low reverse transfer capacitance - AEC-Q101 qualified - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : TO-252AA Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0104 ounces, 0.297grams TO-252AA Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) TC=25o C TC=100o C Pulsed Drain Current (Note 1) TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current (Note 4) TA=25o C TA=70o C Power Dissipation TA=25o C TA=70o C Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 4,5) Junction to Case Junction to Ambient SYMBOL VDS VGS ID IDM PD PD TJ,TSTG RθJC RθJA - Limited only By Maximum Junction Temperature LIMIT -40 +20 -50 -32 -166 75 38 -9 -7 2.4 1.7 -55~175...