PJF10N65M Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V, ID@5A<0.85Ω - High switching speed - Improved dv/dt capability - Low Gate Charge - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case: ITO-220AB-F Package - Terminals : Solderable per MIL-STD-750, Method 2026 - ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3,4) TC=25o C Pulsed Drain Current (Note 1,3) TC=25o C Single Pulse Avalanche Energy (Note 6) Power Dissipation TC=25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 5) Junction to Case Junction to Ambient SYMBOL VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA LIMIT 650 ±30 10 40 22 39 -55~150 3.2 120 UNITS V A m J W o C o C/W Sep 2,2020-REV.00 Page 1 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) VGS=0V,ID=250u A VDS=VGS,ID=250u A -...