• Part: PJF10N65
  • Description: 650V N-Channel Enhancement Mode MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 259.30 KB
Download PJF10N65 Datasheet PDF
PJF10N65 page 2
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PJF10N65 page 3
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PJF10N65 Key Features

  • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
  • Case: TO-220AB / ITO-220AB Molded Plastic
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • 4 .0 1.0 10 +1 0 0
  • t d (o n) tr t d (o ff) tf C C C
  • 450 4 .2
  • A A V ns uC