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PJF10N60 - 600V N-Channel Enhancement Mode MOSFET

Features

  • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

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Datasheet Details

Part number PJF10N60
Manufacturer Pan Jit International
File Size 208.68 KB
Description 600V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet PJF10N60 Datasheet
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PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.
Published: |