PJQ1821 Datasheet | PanJit Semiconductor

Features - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : DFN1010-6L Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.000045 ounces, 0.0013 grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Pulsed Drain Current (Note 1) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient (Note 3,4) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA - Limited only By Maximum Junction Temperature LIMIT -20 +8 -600 -1200 400 3.2 -55~150 UNITS V m A m W m W/ o C o C o C/W January 13,2020 PJQ1821-REV.00 Page 1 PPJQ1821 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on)...