PJQ1938L Datasheet | PanJit Semiconductor

Features - Advanced Trench Process Technology - ESD Protected - Specially Designed for Switch Load - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard DFN1006-3L Mechanical Data - Case : DFN1006-3L Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0007 grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Note 4) Pulsed Drain Current(Note 1) Power Dissipation TA=25o C Derate above 25o C SYMBOL VDS VGS ID IDM Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient(Note 5) TJ,TSTG RθJA LIMIT 60 ±20 240 500 500 4 -55~150 UNITS V m A m W m W/ o C o C o C/W November 9,2022 PJQ1938L-REV.00 Page 1 Electrical Characteristics (TA=25o C unless otherwise noted) Static PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Diode Forward Current Diode Forward Voltage SYMBOL TEST CONDITION BVDSS VGS(th) RDS(on)...