PJQ4446P Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V, ID@8A<9mΩ - RDS(ON), VGS@4.5V, ID@4A<13mΩ - Advanced Trench Process Technology - High density cell design for ultralow on-resistance - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : DFN3333-8L Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.001 ounces, 0.03 grams Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25o C TC=100o C Pulsed Drain Current(Note 1) TC=25o C Power Dissipation TC=25o C TC=100o C Continuous Drain Current TA=25o C TA=70o C Power Dissipation TA=25o C Power Dissipation TA=70o C Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBO L VDS VGS ID IDM PD PD TJ,TSTG RθJC RθJA LIMIT 40 +20 48 30 192 41.7 16 10.5 8.5 2.0 1.3 -55~150 3.0 62.5 UNITS...