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PHENITEC
SEMICONDUCTOR
200mA 40V Low Leak(0.37mm)
XHB06
Schottky Barrier Diode
Chip Information
MAXIMUM RATINGS
Parameter
Symbol
Chip Size
0.37 x 0.37mm
Pad Size
0.30 x 0.30mm
Chip Quantity
80698 pcs/wafer
Scribe Line Width
40um
Passivation
SIN
Wafer Size
5 inch
Top Metallization
Al(For Wire)
Chip Thickness/Back Metal : See below "Ordering Information"
Limit
Unit
Note
Repetitive Peak Reverse Voltage
VRRM
40
Non-Repetitive Peak Reverse Voltage
VRSM
Maximum DC Blocking Voltage
VR 40
Average Forward Rectified Current
IF(AV)
200
Peak Forward Surge Current
IFSM
Storage and Operating Temperature Range Tj,TSTG
ELECTRICAL CHARACTERISTICS
1 -65 to +125
Parameter
Symbol Spec Limit Probe Spec
Maximum Forward Voltage
VF1 0.600 0.575
VF2 0.450 0.
XHB06 Datasheet