BGM1012 Datasheet | Philips Semiconductors

FEATURES - Internally matched to 50 Ω - Very wide frequency range (4 Ghz at 3 d B bandwidth) - Very flat 20 d B gain (DC to 2.9 Ghz at 1 d B flatness) - 10 d Bm saturated output power at 1 GHz - High linearity (18 d Bm IP3(out) at 1 GHz) - Low current (14.6 m A) - Unconditionally stable. APPLICATIONS - LNB IF amplifiers - Cable systems - ISM - General purpose. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 3 14.6 20.1 4.8 9.7 TYP. Top view Marking code: C2-. 6 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION MAM455 2, 5 Fig.1 Simplified outline (SOT363) and symbol. MAX. 4 - - - - UNIT V m A d B d B d Bm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Sep 06 Philips Semiconductors .. Product specification MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS IS Ptot Tstg Tj PD PARAMETER DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 90 °C CONDITIONS RF input AC coupled - - - -...