BGM1014 Datasheet | Philips Semiconductors

description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s s s s s Internally matched to 50 Ω Good output match to 75 Ω 32 d B to 34 d B positive sloped gain for Low Noise Block (LNB) application 12.9 d Bm saturated load power at 1 GHz 40 d B isolation 1.3 Applications s LNB Intermediate Frequency (IF) amplifiers s Cable systems s General purpose 1.4 Quick reference data Table 1: Symbol VS IS |s21|2 NF PL(sat) Quick reference data Parameter DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz Conditions RF input; AC coupled Min 17 31.5 12.5 Typ 5 21.0 32.3 4.2 12.9 Max 6 25 33.0 4.3 Unit V m A d B d B d Bm Philips Semiconductors .. MMIC wideband amplifier 2. Pinning information Table 2: Pin 1 2, 5 3 4 6 Pinning Description VS GND2 RF_OUT GND1 RF_IN 1 2 3 6 4 2, 5 sym062 Simplified outline 6 5 4 Symbol 3. Ordering information Table 3: Ordering information Package Name BGM1014 SC-88 Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: BGM1014 Marking Marking code C5Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VS IS Ptot Tstg Tj PD Parameter DC supply voltage supply current total power dissipation storage temperature junction temperature maximum drive power Tsp ≤ 90 °C Conditions RF input; AC coupled Min - 65 Max 6 30 200 +150 150 - 10 Unit V m A m W °C °C d Bm 6. Remended operating conditions Table 6: Symbol VS Tamb Operating conditions Parameter DC supply voltage ambient temperature Conditions Min 4.5 - 40 Typ 5.0 +25 Max 5.5 +85 Unit V °C 9397 750 14499 © Koninklijke Philips Electronics N.V. 2005. All rights...