PTD2N60 Overview
This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge...
PTD2N60 Key Features
- 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V
- Low gate charge ( typical 9nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability