PTU2N60 Key Features
- 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V
- Low gate charge ( typical 9nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: PTU2N60
- Description: 600V N-Channel MOSFET
- Manufacturer: PHILOP
- Size: 1.52 MB
