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PTU2N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V.
  • Low gate charge ( typical 9nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability General.

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Datasheet preview – PTU2N60

Datasheet Details

Part number PTU2N60
Manufacturer PHILOP
File Size 1.52 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet PTU2N60 Datasheet
Additional preview pages of the PTU2N60 datasheet.

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    Full PDF Text Transcription

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    PTD2N60/PTU2N60 600V N-Channel MOSFET Features • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability General Description This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology.
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