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70N03G
70 Amps,30 Volts N-CHANNEL MOSFET
Featutes
70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-252
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25℃
Symbol Rth(J-c)
PD
70N03G 30 ±20 70 210 200 70
-55 to +150
260
TO-263 1.
70N03G Datasheet
