PIP PTA07N65B
650V N-ch Planar MOSFET
| Part No. | PTA07N65B |
|---|---|
| Datasheet | PTA07N65B Download |
| Manufacturer |  PIP |
| Description | 650V N-ch Planar MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● RoHS Compliant● RDS(ON),typ.=1.2 Ω@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode PTA07N65B BVDSS 650V RDS(ON),Typ. 1.2Ω ID 7.0A
APPLICATIONS
● Adaptor● Charger
● SMPS Standby Power Ordering Information Part Number Package PTA07N65B TO-220F Brand G DS TO-220F Package Not to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PTA07N65B Unit VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 V ±30 ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V EAS Single Pulse Avalanche Energy Power Dissipation PD Derating Factor above 25℃ 7.0 A 28 550 mJ 42 W 0.34 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. Thermal Characteristics...
