PTA07N65B - 650V N-ch Planar MOSFET

PIP

Key Features

RoHS Compliant.
RDS(ON),typ. =1.2 Ω@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode PTA07N65B BVDSS 650V RDS(ON),Typ. 1.2Ω ID 7.0A.

PTA07N65B 650v n-ch planar mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	PTA07N65B
Manufacturer	PIP
File Size	844.83 KB
Description	650V N-ch Planar MOSFET
Datasheet	PTA07N65B Datasheet

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650V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=1.2 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PTA07N65B BVDSS 650V RDS(ON),Typ. 1.2Ω ID 7.0A Applications  Adaptor  Charger  SMPS Standby Power Ordering Information Part Number Package PTA07N65B TO-220F Brand G DS TO-220F Package Not to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PTA07N65B Unit VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 V ±30 ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V EAS Single Pulse Avalanche Energy Power Dissipation PD Derating Factor above 25℃ 7.0 A 28 550 mJ 42 W 0.34 W/℃ TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.