PTA10N80 Overview
800V N-Channel MOSFET General.
PTA10N80 Key Features
- Proprietary New Planar Technology
- RDS(ON),typ.=1.0 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Datasheet Details
| Part number | PTA10N80 |
|---|---|
| Datasheet | PTA10N80-PIP.pdf |
| File Size | 867.86 KB |
| Manufacturer | PIP |
| Description | 800V N-Channel MOSFET |
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