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PTA10N80 - 800V N-Channel MOSFET

Key Features

  • Proprietary New Planar Technology.
  • RDS(ON),typ. =1.0 Ω@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.0Ω ID 10A.

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Datasheet Details

Part number PTA10N80
Manufacturer PIP
File Size 867.86 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet PTA10N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.