PTA10N80 Overview
Key Features
- Proprietary New Planar Technology
- RDS(ON),typ.=1.0 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
| Part | PTA10N80 |
|---|---|
| Description | 800V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 867.86 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |