PTA27N20N Overview
Key Features
- Proprietary New Planar Technology
- RDS(ON),typ.=22mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode PTA27N20N BVDSS 200V RDS(ON),typ. 22mΩ ID 90A
| Part | PTA27N20N |
|---|---|
| Description | 200V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 1.54 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |