PTA27N20N - 200V N-Channel MOSFET

PIP

Key Features

Proprietary New Planar Technology.
RDS(ON),typ. =22mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode PTA27N20N BVDSS 200V RDS(ON),typ. 22mΩ ID 90A.

PTA27N20N 200v n-channel mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	PTA27N20N
Manufacturer	PIP
File Size	1.54 MB
Description	200V N-Channel MOSFET
Datasheet	PTA27N20N Datasheet

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200V N-Channel MOSFET General Features ➢ Proprietary New Planar Technology ➢ RDS(ON),typ.=22mΩ@VGS=10V ➢ Low Gate Charge Minimize Switching Loss ➢ Fast Recovery Body Diode PTA27N20N BVDSS 200V RDS(ON),typ.