PTP11N45 Overview
Key Features
- Proprietary New Planar Technology
- RDS(ON),typ.=0.39 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode PTP11N45 BVDSS 430V RDS(ON),typ. 0.39Ω ID 11A
| Part | PTP11N45 |
|---|---|
| Description | 430V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 837.94 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |