PIP PTP11N45
430V N-Channel MOSFET
| Part No. | PTP11N45 |
|---|---|
| Datasheet | PTP11N45 Download |
| Manufacturer |  PIP |
| Description | 430V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Planar Technology● RDS(ON),typ.=0.39 Ω@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode PTP11N45 BVDSS 430V RDS(ON),typ. 0.39Ω ID 11A
APPLICATIONS
● Ballast and Lighting● DC-AC Inverter
● Other
APPLICATIONS
G DS Ordering Information Part Number Package PTP11N45 TO-220 Brand TO-220 Package No to ScaleABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP11N45 430 ±30 11 Figure 3 Figure 6 500 5.0 140 1.12 300 260 Unit V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
