PTP11N45 - 430V N-Channel MOSFET

Features

Proprietary New Planar Technology.
RDS(ON),typ. =0.39 Ω@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode PTP11N45 BVDSS 430V RDS(ON),typ. 0.39Ω ID 11A.

PIP

PTP11N45 430V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP11N45

Datasheet Details

Part number	PTP11N45
Manufacturer	PIP
File Size	837.94 KB
Description	430V N-Channel MOSFET
Datasheet	PTP11N45 Datasheet
Additional preview pages of the PTP11N45 datasheet.

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Full PDF Text Transcription

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430V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.39 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PTP11N45 BVDSS 430V RDS(ON),typ. 0.

Published: Feb 13, 2025 |