PTP40N30 - 300V N-Channel MOSFET

Datasheet Summary

Features

Proprietary New Planar Technology.
RDS(ON),typ. =0.12 Ω@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode PTP40N30 BVDSS 300V RDS(ON),typ. 0.12Ω ID 40A.

PIP

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PTP40N30 300V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP40N30

Datasheet Details

Part number	PTP40N30
Manufacturer	PIP
File Size	819.98 KB
Description	300V N-Channel MOSFET
Datasheet	PTP40N30 Datasheet
Additional preview pages of the PTP40N30 datasheet.

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Full PDF Text Transcription

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300V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.12 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PTP40N30 BVDSS 300V RDS(ON),typ. 0.

Published: Jul 23, 2025 |