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PTW40N50 - 500V N-Channel MOSFET

Datasheet Summary

Features

  • Advanced Planar Process.
  • RDS(ON),typ. =85 mΩ@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Rugged Poly silicon Gate Structure BVDSS 500V RDS(ON),typ. 85mΩ ID 46A.

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Datasheet Details

Part number PTW40N50
Manufacturer PIP
File Size 832.80 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet PTW40N50 Datasheet
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    PTW40N50 500V N-Channel MOSFET General Features  Advanced Planar Process  RDS(ON),typ.=85 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Rugged Poly silicon Gate Structure BVDSS 500V RDS(ON),typ. 85mΩ ID 46A Applications  BLDC Motor Driver  Electric Welder  High Efficiency SMPS Ordering Information Part Number Package PTW40N50 TO-3P Brand Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PTW40N50 Unit VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.
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