PTW40N50 Overview
Key Features
- Advanced Planar Process
- RDS(ON),typ.=85 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Rugged Poly silicon Gate Structure BVDSS 500V RDS(ON),typ. 85mΩ ID 46A
| Part | PTW40N50 |
|---|---|
| Description | 500V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 832.80 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |