Full PDF Text Transcription for PTW40N50 (Reference)
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PTW40N50. For precise diagrams, and layout, please refer to the original PDF.
PTW40N50 500V N-Channel MOSFET General Features Advanced Planar Process RDS(ON),typ.=85 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gat...
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0V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure BVDSS 500V RDS(ON),typ. 85mΩ ID 46A Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package PTW40N50 TO-3P Brand Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PTW40N50 Unit VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ M
PTW40N50 Datasheet
