PIP PTW40N50
500V N-Channel MOSFET
| Part No. | PTW40N50 |
|---|---|
| Datasheet | PTW40N50 Download |
| Manufacturer |  PIP |
| Description | 500V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Advanced Planar Process● RDS(ON),typ.=85 mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Rugged Poly silicon Gate Structure BVDSS 500V RDS(ON),typ. 85mΩ ID 46A
APPLICATIONS
● BLDC Motor Driver● Electric Welder
● High Efficiency SMPS Ordering Information Part Number Package PTW40N50 TO-3P Brand
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PTW40N50 Unit VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 500 ±30 46 30 180 5000 5.0 540 4.32 300 260 V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
