SPTA60R160E Overview
Key Features
- Multi-Epi Process
- Proprietary New Super-Junction Technology
- RDS(ON),typ.=0.139Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode SPTA60R160E BVDSS 600V RDS(ON),typ. 0.139Ω ID 20A
| Part | SPTA60R160E |
|---|---|
| Description | 600V N-ch Multi-Epi Super-Junction MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 538.58 KB |
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