SPTA60R160E - 600V N-ch Multi-Epi Super-Junction MOSFET

Features

Multi-Epi Process.
Proprietary New Super-Junction Technology.
RDS(ON),typ. =0.139Ω@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode SPTA60R160E BVDSS 600V RDS(ON),typ. 0.139Ω ID 20A.

PIP

SPTA60R160E 600V N-ch Multi-Epi Super-Junction MOSFET by PIP - Datasheet Preview — Datasheet preview – SPTA60R160E

Datasheet Details

Part number	SPTA60R160E
Manufacturer	PIP
File Size	538.58 KB
Description	600V N-ch Multi-Epi Super-Junction MOSFET
Datasheet	SPTA60R160E Datasheet
Additional preview pages of the SPTA60R160E datasheet.

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Full PDF Text Transcription

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600V N-ch Multi-Epi Super-Junction MOSFET General Features  Multi-Epi Process  Proprietary New Super-Junction Technology  RDS(ON),typ.=0.139Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode SPTA60R160E BVDSS 600V RDS(ON),typ. 0.

Published: Aug 29, 2025 |