SPTA60R160E
SPTA60R160E is 600V N-ch Multi-Epi Super-Junction MOSFET manufactured by PIP.
Features
- Multi-Epi Process
- Proprietary New Super-Junction Technology
- RDS(ON),typ.=0.139Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
BVDSS 600V
RDS(ON),typ. 0.139Ω
ID 20A
Applications
- Adaptor
- Charger
- SMPS Standby Power
Ordering Information
Part Number
Package
SPTA60R160E TO-220F
Brand
TO-220F Package No to Scale
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VDSS
Drain-to-Source Voltage
Gate source voltage (static)
±20
VGSS
Gate source voltage (dynamic) AC (f>1Hz)
±30
Continuous Drain Current @ TC = 25ºC
Pulsed Drain Current at VGS=10V[1]
60 dv/dt
Reverse diode...
