SPTA60R160E Overview
600V N-ch Multi-Epi Super-Junction MOSFET General.
SPTA60R160E Key Features
- Multi-Epi Process
- Proprietary New Super-Junction Technology
- RDS(ON),typ.=0.139Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Datasheet Details
| Part number | SPTA60R160E |
|---|---|
| Datasheet | SPTA60R160E-PIP.pdf |
| File Size | 538.58 KB |
| Manufacturer | PIP |
| Description | 600V N-ch Multi-Epi Super-Junction MOSFET |
|
|