SPTA65R280 Description
650V N-ch Super-Junction MOSFET General.
SPTA65R280 Key Features
- New technology for high voltage device
- RDS(ON),typ.=0.24 Ω@VGS=10V
- Ultra Low Gate Charge cause lower driving requirements
- Part: SPTA65R280
- Manufacturer: PIP
- Size: 883.40 KB
Related PIP Datasheets
| Part Number | Description |
|---|---|
| SPTA60R160E | 600V N-ch Multi-Epi Super-Junction MOSFET |
| SPTB10R06 | 100V N-Channel MOSFET |
| SPTD04R014E | 40V N-Channel MOSFET |
| SPTF60R70FD | 600V N-ch Multi-Epi Super-Junction MOSFET |
| SPTJ10R10B | 100V N-Channel MOSFET |