SPTA65R280
SPTA65R280 is 650V N-ch Super-Junction MOSFET manufactured by PIP.
Features
- New technology for high voltage device
- RDS(ON),typ.=0.24 Ω@VGS=10V
- Ultra Low Gate Charge cause lower driving requirements
BVDSS 650V
RDS(ON),typ. 0.24Ω
ID 14A
Applications
- Power factor correction（PFC）
- Uninterruptible Power Supply（UPS）
- Switched mode power supplies(SMPS)
Ordering Information
Part Number Package SPTA65R280 TO-220F
Brand
TO-220F
Package Not to Scale
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain-to-Source Voltage Gate-to-Source Voltage
V ±30
Continuous Drain Current
Pulsed Drain Current at VGS=10V[1]
A 56
Single Pulse Avalanche Energy[2]
307 m J
PD dv/dt dv/dt
TJ& TSTG
Power Dissipation Drain Source voltage slope, VDS≤480V Reverse diode dv/dt，VDS≤480 V,ISD<ID Soldering Temperature Distance of 1.6mm from case for 10...
