SPTA65R280 Overview
Key Features
- New technology for high voltage device
- RDS(ON),typ.=0.24 Ω@VGS=10V
- Ultra Low Gate Charge cause lower driving requirements BVDSS 650V SPTA65R280 RDS(ON),typ. 0.24Ω ID 14A
| Part | SPTA65R280 |
|---|---|
| Description | 650V N-ch Super-Junction MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 883.40 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |