PIP SPTA65R280
650V N-ch Super-Junction MOSFET
| Part No. | SPTA65R280 |
|---|---|
| Datasheet | SPTA65R280 Download |
| Manufacturer |  PIP |
| Description | 650V N-ch Super-Junction MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● New technology for high voltage device● RDS(ON),typ.=0.24 Ω@VGS=10V
● Ultra Low Gate Charge cause lower driving requirements BVDSS 650V SPTA65R280 RDS(ON),typ. 0.24Ω ID 14A
APPLICATIONS
● Power factor correction（PFC）● Uninterruptible Power Supply（UPS）
● Switched mode power supplies(SMPS) Ordering Information Part Number Package SPTA65R280 TO-220F Brand GDS TO-220F Package Not to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value SPTA65R280 Unit VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 V ±30 ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V[1] 14 A 56 EAS Single Pulse Avalanche Energy[2] 307 mJ PD dv/dt dv/dt TL TJ& TSTG Power Dissipation Drain Source voltage slope, VDS≤480V Reverse diode dv/dt，VDS≤480 V,ISD<ID Soldering Temperature Distance of 1.6mm from case for 10 seconds Operating and Storage Temperature Range 25 50 15 300 -55 to 150 W V/ns V/ns ℃ Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
