SPTA65R280 - 650V N-ch Super-Junction MOSFET

PIP

Key Features

New technology for high voltage device.
RDS(ON),typ. =0.24 Ω@VGS=10V.
Ultra Low Gate Charge cause lower driving requirements BVDSS 650V SPTA65R280 RDS(ON),typ. 0.24Ω ID 14A.

SPTA65R280 650v n-ch super-junction mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	SPTA65R280
Manufacturer	PIP
File Size	883.40 KB
Description	650V N-ch Super-Junction MOSFET
Datasheet	SPTA65R280 Datasheet

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650V N-ch Super-Junction MOSFET General Features  New technology for high voltage device  RDS(ON),typ.=0.24 Ω@VGS=10V  Ultra Low Gate Charge cause lower driving requirements BVDSS 650V SPTA65R280 RDS(ON),typ. 0.