SPTB10R06
Overview
- High speed power switching
- RDS(ON),typ.=5.0mΩ@VGS=10V
- Enhanced body diode dv/dt capability
- Enhanced avalanche ruggedness
| Part | SPTB10R06 |
|---|---|
| Description | 100V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 1.73 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |