SPTP10R06 - 100V N-Channel MOSFET

Features

High speed power switching.
RDS(ON),typ. =5.0mΩ@VGS=10V.
Enhanced body diode dv/dt capability.
Enhanced avalanche ruggedness SPTP10R06 SPTB10R06 BVDSS 100V RDS(ON),typ. 5.0mΩ ID[2] 131A.

PIP

SPTP10R06 100V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – SPTP10R06

Datasheet Details

Part number	SPTP10R06
Manufacturer	PIP
File Size	1.73 MB
Description	100V N-Channel MOSFET
Datasheet	SPTP10R06 Datasheet
Additional preview pages of the SPTP10R06 datasheet.

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Full PDF Text Transcription

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100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced avalanche ruggedness SPTP10R06 SPTB10R06 BVDSS 100V RDS(ON),typ. 5.

Published: Aug 29, 2025 |