PIP SPTP10R06
100V N-Channel MOSFET
| Part No. | SPTP10R06 |
|---|---|
| Datasheet | SPTP10R06 Download |
| Manufacturer |  PIP |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● High speed power switching● RDS(ON),typ.=5.0mΩ@VGS=10V
● Enhanced body diode dv/dt capability
● Enhanced avalanche ruggedness SPTP10R06 SPTB10R06 BVDSS 100V RDS(ON),typ. 5.0mΩ ID[2] 131A
APPLICATIONS
● Synchronous rectification in SMPS● Hard switching and High speed circuit
● DC/DC in telecoms and industrial Ordering Information Part Number Package SPTP10R06 TO-220 SPTB10R06 TO-263 Brand GDS TO-220 Package Not to Scale GD S TO-263 Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter SPTP10R06/ SPTB10R06 Unit VDSS Drain-to-Source Voltage[1] 100 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current[2] 131 ID Continuous Drain Current @ Tc=100℃[2] 91 IDM Pulsed Drain Current at VGS=10V[2,4] 459 EAS Single Pulse Avalanche Energy L=0.5mH 272 dv/dt Peak Diode Recovery dv/dt[3] 5.0 Power Dissipation 161 PD Derating Factor above 25℃ 1.0 TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds,...
